1998. 10. 8
1/3
SEMICONDUCTOR
TECHNICAL DATA
BC546/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
High Voltage : BC546 V
CEO
=65V.
For Complementary With PNP Type BC556/557/558.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
BC546
V
CBO
80
V
BC547
50
BC548
30
Collector-Emitter
Voltage
BC546
V
CEO
65
V
BC547
45
BC548
30
Emitter-Base
Voltage
BC546
V
EBO
6
V
BC547
6
BC548
5
Collector Current
BC546
I
C
100
mA
BC547
100
BC548
100
Emitter Current
BC546
I
E
-100
mA
BC547
-100
BC548
-100
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1998. 10. 8
2/3
BC546/7/8
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CLASSIFICATION
none
A
B
C
h
FE
BC546
110 450
110 220
200 450
-
BC547
110 800
110 220
200 450
420 800
BC548
110 800
110 220
200 450
420 800
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
15
nA
DC Current Gain (Note)
BC546
h
FE
V
CE
=5V, I
C
=2mA
110
-
450
BC547
110
-
800
BC548
110
-
800
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=5mA
-
-
0.6
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=100mA, I
B
=5mA
-
0.9
1.1
V
Base-Emitter Voltage
V
BE(ON)
1
V
CE
=5V, I
C
=2mA
0.58
-
0.7
V
V
BE(ON)
2
V
CE
=5V, I
C
=10mA
-
-
0.75
V
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA, f=100MHz
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
-
4.5
pF
Noise Figure
NF
V
CE
=6V, I
C
=0.1mA
R
g
=10k , f=1kHz
-
1.0
10
dB
NOTE : According to the value of h
FE
the BC546, BC547, BC548 are classified as follows.
1998. 10. 8
3/3
BC546/7/8
Revision No : 3
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V (LOW VOLTAGE REGION)
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
10
DC CURRENT GAIN h
FE
3
1
0.3
0.1
COLLECTOR CURRENT I (mA)
C
h - I
f - I
C
COLLECTOR CURRENT I (mA)
0.1
0.3
1
3
T
TRANSITION FREQUENCY f (MHz)
10
BASE CURRENT I (
A)
B
0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
1
2
3
4
5
6
7
40
80
120
160
200
240
COMMON EMITTER
Ta=25 C
6.0
5.0
3.0
2.0
1.0
0.5
I =0.2mA
B
0
FE
C
10
30
100
300
30
50
100
300
500
1k
COMMON EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =5V
V =1V
CE
CE
VOLTAGE V (V)
CE(sat)
0.01
3
1
0.3
0.1
COLLECTOR CURRENT I (mA)
C
V - I
CE(sat)
C
COLLECTOR-EMITTER SATURATION
10
30
100
300
0.03
0.05
0.1
0.3
0.5
1
3
COMMON EMITTER
I /I =10
C B
Ta=100 C
Ta=25 C
Ta=-25 C
T
C
10
30
100
300
30
50
100
300
500
1k
3k
COMMON EMITTER
V =5V
Ta=25 C
CE
B
BE
0.2
0.4
0.6
0.8
1.0
1.2
1
3
10
30
100
300
1k
3k
COMMON
EMITTER
V =6V
CE
T
a=100 C
Ta=
25 C
Ta=
-25
C
P (mW)
25
50
75
100
125
150
175
100
200
300
400
500
625
700
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